Inheriting the legacy of core-memory, ST-MRAM promises 10x bandwidth, 10x density, and 1/3rd the power vs.
Inheriting the legacy of core-memory, ST-MRAM promises 10x bandwidth, 10x density, and 1/3rd the power vs. NAND
According to a story published by The Nihon Keizai Shimbun's (Nikkei) "Asian Review" section, more than twenty major American and Japanese semiconductor firms have formed a new collaborative alliance, which will work together to develop next generation memory technologies. The group's aim is to develop consumer-ready magnetoresistive random-access memory (MRAM). MRAM is a technology that some are hoping will replace both long term storage devices (e.g. magnetic hard disc drives and Flash storage) and volatile memory (e.g. DRAM).
More info at source: The Nihon Keizai Shimbun
[Submitted by Christo [PCD]
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